General Description
This N-Channel MOSFET is producedusing Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 22.9 mΩ ( Typ.)@ VGS = 10 V, ID = 31 A
• Fast Switching Speed
• Low Gate Charge
• High Performance Trench technology for Extremely Low
   RDS(on)
• High Power and Current Handing Capability
• RoHS Compliant

APPLICATIONs
• Consumer Appliances
• Synchronous Rectification
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies