Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 3.2 mΩ ( Typ.) @ VGS = 10 V, ID = 75 A
• Fast Switching Speed
• Low Gate Charge, QG = 89 nC (Typ.)
• High Performance Trench Technology for Extremely Low
   RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant

APPLICATIONs
• Synchronous Rectification for ATX / Server / Telecom PSU
• Battery Protection Circuit
• Motor Drives and Uninterruptible Power Supplies
• Micro Solar Inverter