General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for bipolar digital transistors and small signal MOSFETs.

FEATUREs
■ 25 V, 0.50 A continuous, 1.5 A peak. RDS(ON) = 0.45 Ω @ VGS= 4.5 V, RDS(ON) =0.60 Ω @ VGS= 2.7 V.
■ Very low level gate drive requirements allowing direct operation in 3 V circuits (VGS(th) < 1.5 V).
■ Gate-Source Zener for ESD ruggedness (>6kV Human Body Model).
■ Compact industry standard SC70-6 surface mount package.