General Description
   This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON)and fast switching speed.

FEATUREs
• VDS=30V
• RDS(ON) (at VGS =10V) < 3.9mΩ
• RDS(ON) (at VGS = 4.5V) < 4.4mΩ
• High performance trench technology for extremely low
   RDS(ON)
• Low gate charge
• High power and current handling capability

APPLICATIONs
• DC/DC converters