Description
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.

FEATUREs
• RDS(on) = 33.4 mΩ (Typ.) @ VGS = 10 V, ID = 26 A
• RDS(on) = 42.2 mΩ (Typ.) @ VGS = 4.5 V, ID = 20 A
• Fast Switching Speed
• Low Gate Charge, QG = 17.6 nC (Typ.)
• High Performance Trench Technology for Extremely Low
   RDS(on)
• High Power and Current Handling Capability
• RoHS Compliant

APPLICATIONs
• Consumer Applicances
• LED TV
• Synchronous Rectification
• Uninterruptible Power Supplies
• Micro Solar Inverter