General Description
This N−Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.
These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC/DC power supply designs with higher overall efficiency.

FEATUREs
• 25 A, 100 V. RDS(ON) = 46 mΩ @ VGS = 10 V
                       RDS(ON) = 51 mΩ @ VGS = 6 V
• Low Gate Charge (38 nC Typical)
• Fast Switching Speed
• High Performance Trench Technology for Extremely Low RDS(ON)
• High Power and Current Handling Capability