General Description
This P-Channel Logic Level MOSFET is produced using Fairchild Semiconductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for notebook computer applications: load switching and power management, battery charging circuits, and DC/DC conversion.

FEATUREs
■ -4 A, -30 V. RDS(ON) = 0.050 Ω @ VGS = -10 V
                       RDS(ON) = 0.075 Ω @ VGS = -4.5 V.
■ Low gate charge (8nC typical).
■ High performance trench technology for extremely low
   RDS(ON).
■ SuperSOTTM-6 package: small footprint (72% smaller than
   standard SO-8); low profile (1mm thick).