General Description
These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchilds proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications such as DC/DC converters and high efficiency switching circuits where fast switching, low in-line power loss, and resistance to transients are needed.

FEATUREs
● 58 A, 30 V. RDS(ON) = 0.011 W @ VGS=10 V
            RDS(ON) = 0.019 W @ VGS=4.5 V.
● Low gate charge (typical 34 nC).
● Low Crss (typical 175 pF).
● Fast switching speed.