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FCPF20N60 Datasheet - Fairchild Semiconductor

FCP20N60 image

Part Name
FCPF20N60

Other PDF
  2014  

PDF
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page
10 Pages

File Size
1.2 MB

MFG CO.
Fairchild
Fairchild Semiconductor 

Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and with stand extreme dv/dt rate and higher avalanche energy.Consequently, SuperFET is very suitable for various AC/DC power conversion in switching mode operation for system miniaturization and higher efficiency.


FEATUREs
• 650V @TJ = 150°C
• Typ. RDS(on) = 0.15Ω
• Ultra low gate charge (typ. Qg = 75nC)
• Low effective output capacitance (typ. Coss.eff = 165pF)
• 100% avalanche tested

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Part Name
Description
View
MFG CO.
N-channel MOSFET BVDSS: 600V ID: 4.5A RDS(ON): 2.3ohm
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15A, 60V, RDS(ON) 17mΩ N-Channel Enhancement MOSFET
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Secos Corporation.
HEXFET Power MOSFET(Vdss=600V/ Rds(on)=1.2ohm/ Id=6.2A)
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International Rectifier
HEXFET® Power MOSFET VDSS=500V, RDS(on)typ.=0.135Ω, ID=32A
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International Rectifier
90A , 100V , RDS(ON) 16mΩ N-Channel Enhancement Mode MOSFET
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Secos Corporation.
35A, 30V, RDS(ON) 2.8 mΩ N-Channel Enhancement MOSFET
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Secos Corporation.

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