FCP380N60E Datasheet - Fairchild Semiconductor
MFG CO.

Fairchild Semiconductor
Description
SuperFET®II MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, SuperFETII MOSFET is suitable for various AC/DC power conversion for system miniaturization and higher efficiency.
FEATUREs
• 650 V @TJ = 150°C
• Max. RDS(on) = 380 mΩ
• Ultra Low Gate Charge ( Typ. Qg = 34 nC)
• Low Effective Output Capacitance ( Typ. Coss.eff = 97 pF)
• 100% Avalanche Tested
APPLICATIONs
• LCD / LED / PDP TV Lighting
• Solar Inverter
• AC-DC Power Supply
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