Description
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utili zation of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits.

FEATUREs
• 45A, 30V
•rDS(ON)= 0.022Ω
• Temperature CompensatingPSPICE Model
• Can be Driven Directly from CMOS, NMOS, and TTL Circuits
• Peak Current vs Pulse Width Curve
• UIS Rating Curve
• 175°C Operating Temperature