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EN29LV641H Datasheet - Eon Silicon Solution Inc.

EN29LV641H image

Part Name
EN29LV641H

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46 Pages

File Size
519.8 kB

MFG CO.
Eon
Eon Silicon Solution Inc. 

GENERAL DESCRIPTION
The EN29LV641H/L / EN29LV640U is a 64-Megabit (4,194,304x16), electrically erasable, read/write non-volatile flash memory. Any word can be programmed typically in 8µs. This device is entirely command set compatible with the JEDEC single-power-supply Flash standard.
The EN29LV641H/L / EN29LV640U is designed to allow either single Sector or full Chip erase operation, where each Sector Group can be protected against program/erase operations or temporarily unprotected to erase or program. The device can sustain a minimum of 100K program/erase cycles on each Sector.


FEATURES
• Single power supply operation
   - Full voltage range: 2.7 to 3.6 volts for read,
      erase and program operations
• Low power consumption (typical values at 5
   MHz)
   - 9 mA typical active read current
   - 20 mA typical program/erase current
   - Less than 1 µA current in standby or automatic
      sleep mode.
• JEDEC standards compatible
   - Pinout and software compatible with singlepower supply Flash standard
• Manufactured on 0.18μm process
   technology
• Flexible Sector Architecture:
   - One hundred and twenty-eight 32K-Word
      sectors.
• Minimum 100K program/erase endurance
   cycles.
• High performance for program and erase
   - Word program time: 8µs typical
   - Sector Erase time: 500ms typical
   - Chip Erase time: 64s typical
• Package Options
   - 48-pin TSOP
   - 63 ball 11mm x 12mm FBGA


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