Description
This new generation N-Channel Enhancement Mode MOSFET is designed to minimize RDS(ON), yet maintain superior switching performance. This device is ideal for use in notebook battery power management and loadswitch.

FEATUREs
• Rated to +175°C – Ideal for High Ambient Temperature
   Environments
• 100% Unclamped Inductive Switching – Ensures More Reliable
   and Robust End Application
• High Conversion Efficiency
• Low RDS(ON) – Minimizes On-State Losses
• Low Input Capacitance
• Fast Switching Speed
• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
• Halogen and Antimony Free. “Green” Device (Note 3)
• Qualified to AEC-Q101 Standards for High Reliability

APPLICATIONs
• Motor Control
• DC-DC Converters
• Power Management