Description
These devices are N-channel Zener-protected Power MOSFETs developed using STMicroelectronics SuperMESH™ technology, achieved through optimization of STs well established strip-based PowerMESH™ layout. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
FEATUREs
■ 100% avalanche tested
■ Very low intrinsic capacitances
APPLICATIONs
■ Switching applications
Part Name
Description
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MFG CO.
N-channel 600 V - 1.76 Ω - 4 A SuperMESH™ Power MOSFET DPAK - D2PAK - IPAK - I2PAK - TO-220 - TO-220FP
STMicroelectronics
N-channel 600 V, 1.76 Ω, 4 A SuperMESH™ Power MOSFET in DPAK, D2PAK, IPAK, I2PAK, TO-220, TO-220FP
STMicroelectronics
N-channel 600 V, 0.37 Ω, 10 A MDmesh™ II Power MOSFET TO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V - 0.37 Ω- 10 A - TO-220 - TO-220FP- I2PAK - IPAK DPAK - D2PAK second generation MDmesh™ Power MOSFET ( Rev : 2008 )
STMicroelectronics
N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK
STMicroelectronics
N-channel 600 V, 0.85 Ω, 4.6 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 55 V, 6.5 mΩ, 80 A, DPAK, IPAK, D2PAK, I2PAK, TO-220 TO-220FP STripFET™ III Power MOSFET
STMicroelectronics
N-channel 600 V, 0.56 Ω,7 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK, D2PAK
STMicroelectronics
N-channel 600 V, 0.53 Ω, 10 A, DPAK, TO-220, TO-220FP, IPAK MDmesh™ II Power MOSFET
STMicroelectronics
N-channel 600 V, 0.17 Ω, 17 A FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 ( Rev : 2008 )
STMicroelectronics