GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 10W – 12.5V – 500MHz SINGLE ENDED

FEATURES
• SIMPLIFIED AMPLIFIER DESIGN
• SUITABLE FOR BROAD BAND APPLICATIONS
• LOW Crss
• USEFUL PO AT 1GHz
• LOW NOISE
• HIGH GAIN – 10 dB MINIMUM

APPLICATIONS
• HF/VHF/UHF COMMUNICATIONS from 1 MHz to 1 GHz