D03S60C Datasheet - Infineon Technologies
MFG CO.

Infineon Technologies
Features
• Revolutionary semiconductor material - Silicon Carbide
• No reverse recovery/ no forward recovery
• Temperature independent switching behavior
• High surge current capability
• Qualified according to JEDEC1) for target applications
• Breakdown voltage tested at 5mA2)
• Optimized for high temperature operation
thinQ! 2G Diode designed for fast switching applications like:
• CCM PFC
Part Name
Description
View
MFG CO.
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2006 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!® SiC Schottky Diode
Infineon Technologies
2nd generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode ( Rev : 2009 )
Infineon Technologies
2nd Generation thinQ!™ SiC Schottky Diode
Infineon Technologies