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CY14B104NA-BA20XI(2011) Datasheet - Cypress Semiconductor

CY14B104LA image

Part Name
CY14B104NA-BA20XI

Other PDF
  2012   lastest PDF  

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24 Pages

File Size
778.5 kB

MFG CO.
Cypress
Cypress Semiconductor 

Functional Description
The Cypress CY14B104LA/CY14B104NA is a fast static RAM (SRAM), with a nonvolatile element in each memory cell. The memory is organized as 512 K bytes of 8 bits each or 256 K words of 16 bits each. The embedded nonvolatile elements incorporate QuantumTrap technology, producing the world’s most reliable nonvolatile memory. The SRAM provides infinite read and write cycles, while independent nonvolatile data resides in the highly reliable QuantumTrap cell. Data transfers from the SRAM to the nonvolatile elements (the STORE operation) takes place automatically at power-down. On power-up, data is restored to the SRAM (the RECALL operation) from the nonvolatile memory. Both the STORE and RECALL operations are also available under software control.


FEATUREs
■ 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 512 K × 8 (CY14B104LA) or 256 K × 16 (CY14B104NA)
■ Hands off automatic STORE on power-down with only a small capacitor
■ STORE to QuantumTrap nonvolatile elements initiated by software, device pin, or AutoStore on power-down
■ RECALL to SRAM initiated by software or power-up
■ Infinite read, write, and recall cycles
■ 1 million STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3 V +20%, -10% operation
■ Industrial temperature
■ Packages
    ❐ 44-/54-pin thin small outline package (TSOP II)
    ❐ 48-ball fine-pitch ball grid array (FBGA)
■ Pb-free and restriction of hazardous substances (RoHS) compliant

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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