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CY14B104M(2009) Datasheet - Cypress Semiconductor

CY14B104K image

Part Name
CY14B104M

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33 Pages

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639.1 kB

MFG CO.
Cypress
Cypress Semiconductor 

Functional Description
The Cypress CY14B104K and CY14B104M combines a 4 Mbit nonvolatile static RAM with a full featured RTC in a monolithic integrated circuit. The embedded nonvolatile elements incorporate QuantumTrap technology producing the world’s most reliable nonvolatile memory. The SRAM is read and written infinite number of times, while independent nonvolatile data resides in the nonvolatile elements.


FEATUREs
■ 20 ns, 25 ns, and 45 ns access times
■ Internally organized as 512K x 8 (CY14B104K) or 256K x 16 (CY14B104M)
■ Hands off automatic STORE on power down with only a small capacitor
■ STORE to QuantumTrap nonvolatile elements is initiated by software, device pin, or AutoStore on power down
■ RECALL to SRAM is initiated by software or power up
■ High reliability
■ Infinite Read, Write, and RECALL cycles
■ 200,000 STORE cycles to QuantumTrap
■ 20 year data retention
■ Single 3V +20%, –10% operation
■ Data integrity of Cypress nvSRAM combined with full featured Real Time Clock (RTC)
■ Watchdog timer
■ Clock alarm with programmable interrupts
■ Capacitor or battery backup for RTC
■ Commercial and industrial temperatures
■ 44 and 54-pin TSOP II package
■ Pb-free and RoHS compliance

Page Link's: 1  2  3  4  5  6  7  8  9  10  More Pages 

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