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CPC5602C(2008) Datasheet - Clare Inc => IXYS

CPC5602C image

Part Name
CPC5602C

Other PDF
  2001   lastest PDF  

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page
3 Pages

File Size
72 kB

MFG CO.
Clare
Clare Inc => IXYS 

Description
The CPC5602 is an “N” channel depletion mode Field Effect Transistor (FET) that utilizes Clare’s proprietary third generation vertical DMOS process. The third generation process realizes world class, high voltage MOSFET performance in an economical silicon gate process. The vertical DMOS process yields a highly reliable device, particularly in difficult application environments such as telecommunications.


FEATUREs
• 350V Drain-to-Source Voltage
• Low On-resistance: 8 Ohms (Typical)
• High input impedance
• Low input and output leakage
• Small package size SOT-223
• PC Card (PCMCIA) Compatible
• PCB Space and Cost Savings


APPLICATIONs
• Support Component for LITELINK™ Data Access Arrangement (DAA)
• Telecommunications

Page Link's: 1  2  3 

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