Part Name
CP753V
Other PDF
PDF
page
2 Pages
File Size
405.2 kB
MFG CO.
Central Semiconductor
CP753V Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 66 x 66 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 7.9 x 7.9 MILS
Emitter 1 Bonding Pad Area 7.9 x 9.5 MILS
Emitter 2 Bonding Pad Area 7.9 x 9.5 MILS
Top Side Metalization Al-Si - 30,000Å
Back Side Metalization Ti/Ni/Ag - 2,000Å/3,000Å/20,000Å
Part Name
Description
View
MFG CO.
Small Signal Transistors PNP - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistor PNP - High Current Transistor Chip ( Rev : 2010 )
Central Semiconductor
Small Signal Transistors NPN - High Current Transistor Chip ( Rev : 2005 )
Central Semiconductor
Share Link: 