CP608 Datasheet - Central Semiconductor
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 66 x 66 MILS
Die Thickness 12.5 ± 1.0 MILS
Base Bonding Pad Area 12 x 24 MILS
Emitter Bonding Pad Area 11 x 14 MILS
Top Side Metalization Al - 50,000Å
Back Side Metalization Cr/Ni/Ag - 16,000Å
Part Name
Description
View
MFG CO.
Power Transistor PNP - Amp/Switch Transistor Chip
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Power Transistor PNP - Amp/Switch Transistor Chip ( Rev : 2003 )
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Small Signal Transistor PNP - Amp/Switch Transistor Chip
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Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
Small Signal Transistor PNP - Amp/Switch Transistor Chip
Central Semiconductor
