Part Name
CP595
Other PDF
no available.
PDF
page
2 Pages
File Size
200.3 kB
MFG CO.
Central Semiconductor
CP595 Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 30 x 30 MILS
Die Thickness 7.0 MILS
Base Bonding Pad Area 8.0 x 8.0 MILS
Emitter Bonding Pad Area 7.6 x 7.6 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 10,000Å
Part Name
Description
View
MFG CO.
Small Signal Transistor PNP - High Voltage Transistor Chip ( Rev : 2002 )
Central Semiconductor
Small Signal Transistors PNP - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
Small Signal Transistors PNP - High Voltage Transistor Chip ( Rev : 2005 )
Central Semiconductor
Share Link: 