Part Name
CP566
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MFG CO.
Central Semiconductor
CP566 Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 31.5 x 31.5 MILS
Die Thickness 11 MILS
Base Bonding Pad Area 7.8 x 6.2 MILS
Emitter Bonding Pad Area 8.0 x 5.3 MILS
Top Side Metalization Al - 12,000Å
Back Side Metalization Au - 10,000Å
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MFG CO.
Small Signal Transistor PNP - Darlington Transistor Chip ( Rev : 2002 )
Central Semiconductor
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