CP555 Datasheet - Central Semiconductor
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 15 x 10 MILS
Die Thickness 8.0 MILS
Base Bonding Pad Area 3.6 x 2.4 MILS
Emitter Bonding Pad Area 3.6 x 2.4 MILS
Top Side Metalization Al - 20,000Å
Back Side Metalization Au - 15,000Å
Part Name
Description
View
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