The CP357X-CMLDM3737 is a silicon N-Channel MOSFET designed for high speed pulsed amplifi er and driver applications.

MECHANICAL SPECIFICATIONS:

   Die Size 22 x 17 MILS
   Die Thickness 5.5 MILS
   Gate Bonding Pad Size 3.5 x 3.5 MILS
   Source Bonding Pad Size 14.5 x 19.4 MILS
   Top Side Metalization Al-Si – 35,000Å
   Back Side Metalization Au – 9,000Å
   Scribe Alley Width 1.97 MILS
   Wafer Diameter 6 INCHES
   Gross Die Per Wafer 63,845