The CP353V-CZT853 is a silicon NPN transistor designed for high current applications.

MECHANICAL SPECIFICATIONS:

   Die Size 65.7 x 65.7 MILS
   Die Thickness 7.1 MILS
   Base Bonding Pad Size 7.9 x 7.9 MILS
   Emitter 1 Bonding Pad Size 7.9 x 9.5 MILS
   Emitter 2 Bonding Pad Size 7.9 x 9.5 MILS
   Top Side Metalization Al-Si – 30,000Å
   Back Side Metalization Ti/Ni/Ag – 2,000Å/3,000Å/20,000Å
   Scribe Alley Width 1.96 MILS
   Wafer Diameter 5 INCHES
   Gross Die Per Wafer 3,878