Part Name
CP329V
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MFG CO.
Central Semiconductor
CP329V Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 27 x 27 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 4.2 x 4.2 MILS
Emitter Bonding Pad Area 4.3 x 4.3 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 13,000Å
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