CP319 Datasheet - Central Semiconductor
MFG CO.
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 87 x 87 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 24 x 15 MILS
Emitter Bonding Pad Area 38 x 16 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti/Ni/Ag - 11,000Å
Part Name
Description
View
MFG CO.
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN- Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Silicon Darlington Transistor Chip
Central Semiconductor
Power Transistor 8.0 Amp NPN Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN, 8.0A Power Transistor Chip
Central Semiconductor
Power Transistor PNP - Silicon Power Transistor Chip
Central Semiconductor
Power Transistor NPN - Darlington Chip
Central Semiconductor
Power Transistor NPN - Darlington Chip
Central Semiconductor
