Part Name
CP311
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MFG CO.
Central Semiconductor
CP311 Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 109.5 x 109.5 MILS
Die Thickness 9.0 MILS
Base Bonding Pad Area 23.6 x 15.4 MILS
Emitter Bonding Pad Area 37.8 x 15.8 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Ti / Ni / Ag - 11,300Å
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