CP287 Datasheet - Central Semiconductor
MFG CO.
Central Semiconductor
PROCESS DETAILS
Die Size 130 x 130 MILS
Die Thickness 9.5 MILS
Base Bonding Pad Area 37 x 20 MILS
Emitter Bonding Pad Area 38 x 20 MILS
Top Side Metalization Al - 45,000Å
Back Side Metalization Ti/Ni/Ag - (3000Å, 10,000Å, 10,000Å)
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