Part Name
CP219
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MFG CO.
Central Semiconductor
CP219(2010) Datasheet - Central Semiconductor
Central Semiconductor
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 83 x 83 MILS
Die Thickness 11 MILS
Base Bonding Pad Area 13.2 x 19.7 MILS
Emitter Bonding Pad Area 13.2 x 21.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 12,000Å
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