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CP208(2002) Datasheet - Central Semiconductor

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Part Name
CP208

Description
Power Transistor NPN - Amp/Switch Transistor Chip

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2 Pages

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MFG CO.
Central-Semiconductor
Central Semiconductor 

PROCESS DETAILS
   Process                              EPITAXIAL PLANAR
   Die Size                              66 x 66 MILS
   Die Thickness                     12.5 ± 1.0 MILS
   Base Bonding Pad Area     12 x 24 MILS
   Emitter Bonding Pad Area  11 x 14 MILS
   Top Side Metalization          Al - 50,000Å
   Back Side Metalization       Cr/Ni/Ag - 16,000Å

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