CMPT918 Datasheet - Central Semiconductor Corp
MFG CO.
Central Semiconductor Corp
PROCESS DETAILS
Process EPITAXIAL PLANAR
Die Size 14.5 x 14.5 MILS
Die Thickness 7.1 MILS
Base Bonding Pad Area 2.4 x 2.2 MILS
Emitter Bonding Pad Area 2.4 x 2.2 MILS
Top Side Metalization Al - 30,000Å
Back Side Metalization Au - 18,000Å
Part Name
Description
View
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