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CJU05N25 PDF
CJU05N25 Datasheet - Jiangsu Changjiang Electronics Technology Co., Ltd
MFG CO.
Jiangsu Changjiang Electronics Technology Co., Ltd
FEATURES
◆ Avalanche Energy Specified
◆ Source-to-Drain Diode Recovery Time Comparable to a
Discrete Fast Recovery Diode
◆ Diode is Characterized for Use in Bridge Circuits
◆ IDSS and VDS(on) Specified at Elevated Temperature
Part Name
Description
View
MFG CO.
POWER FILED EFFECT TRANSISTOR
Jiangsu Changjiang Electronics Technology Co., Ltd
POWER FILED EFFECT TRANSISTOR
Jiangsu Changjiang Electronics Technology Co., Ltd
POWER FILED EFFECT TRANSISTOR
Jiangsu Changjiang Electronics Technology Co., Ltd
POWER FILED EFFECT TRANSISTOR
Jiangsu Changjiang Electronics Technology Co., Ltd
MOS FILED EFFECT TRANSISTOR
Renesas Electronics
SILICON N-CHANNEL MOS TYPE FILED EFFECT TRNASISTOR
Toshiba
SILICON N-CHANNEL DUAL GATE MOS TYPE FILED EFFECT TRANSISTOR
Toshiba
Power Field Effect Transistor
Motorola => Freescale
Power Field Effect Transistor
Motorola => Freescale
Power Field Effect Transistor
Motorola => Freescale
