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CJP08N60 Datasheet - ZP Semiconductor

CJP08N60 image

Part Name
CJP08N60

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page
2 Pages

File Size
399.1 kB

MFG CO.
ZPSEMI
ZP Semiconductor 

GENERAL DESCRIPTION
   This advanced high voltage MOSFET is designed to stand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain-to-source diode fast recovery time. Desighed for high voltage, high speed switching applications such as power supplies, converters, power motor controls and bridge circuits.


FEATURE
• High Current Rating
• Lower RDS(on)
• Lower Capacitance
• Lower Total Gate Charge
• Tighter VSD Specifications
• Avalanche Energy Specified


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