C4552M Datasheet - NEC => Renesas Technology
MFG CO.

NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
The 2SC4552 is a power transistor developed for high-speed switching and features low VCE(sat)and high hFE. This transistor is ideal for use in drivers such as DC/DC converters and actuators. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost.
FEATURES
• High hFEand low VCE(sat):
hFE ≥100 (VCE= 2 V, IC= 3 A)
VCE(sat) ≤0.3 V (IC= 8 A, IB= 0.4 A)
• Mold package that does not require an insulating board or insulation bushing
Part Name
Description
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MFG CO.
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
Renesas Electronics
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology
NPN SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING
NEC => Renesas Technology