HOME >>> Inchange Semiconductor >>>
C3355 PDF
C3355 Datasheet - Inchange Semiconductor
MFG CO.

Inchange Semiconductor
DESCRIPTION
• Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 8.0 dB TYP.
@VCE = 10 V, IC = 7 mA, f = 1.0 GHz
NF = 1.1 dB TYP., Ga = 9.0 dB TYP.
@VCE = 10 V, IC = 40 mA, f = 1.0 GHz
• High Power Gain
MAG= 11 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
APPLICATIONS
• Designed for low noise amplifier at VHF, UHF and CATV band.
Part Name
Description
View
MFG CO.
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
New Jersey Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
Inchange Semiconductor
Silicon NPN RF Transistor
New Jersey Semiconductor