C2669 Datasheet - Toshiba
MFG CO.

Toshiba
High Frequency Amplifier Applications
• High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz)
• Recommended for FM IF, OSC stage and AM CONV, IF stage.
Part Name
Description
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MFG CO.
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) ( Rev : 1998 )
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) ( Rev : 2007 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
Toshiba
TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE (PCT PROCESS) ( Rev : 1997 )
Toshiba
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) ( Rev : 2010 )
Toshiba