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BUZ110S Datasheet - Infineon Technologies

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Part Name
BUZ110S

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8 Pages

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123.4 kB

MFG CO.
Infineon
Infineon Technologies 

SIPMOS Power Transistor

Product Summary
Drain source voltage VDS  55V
Drain-Source on-state resistance RDS(on) 0.01Ω
Continuous drain current ID  80A

Features
• N channel
• Enhancement mode
• Avalanche rated
• dv/dtrated
• 175 ˚C operating temperature

Page Link's: 1  2  3  4  5  6  7  8 

Part Name
Description
View
MFG CO.
SIPMOS® Power-Transistor ( Rev : 2008 )
PDF
Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2012 )
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SIPMOS® Power-Transistor
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SIPMOS® Power-Transistor
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SIPMOS® Power-Transistor
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Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2007 )
PDF
Infineon Technologies
SIPMOS® Power-Transistor
PDF
Infineon Technologies
SIPMOS® Power-Transistor
PDF
Infineon Technologies
SIPMOS® Power-Transistor
PDF
Infineon Technologies
SIPMOS® Power-Transistor ( Rev : 2011 )
PDF
Infineon Technologies

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