Part Name
BUK9506-75B
Description
Other PDF
no available.
PDF
page
13 Pages
File Size
211.7 kB
MFG CO.

NXP Semiconductors.
General description
Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.
FEATUREs and benefits
■ AEC Q101 compliant
■ Low conduction losses due to low on-state resistance
■ Suitable for logic level gate drive sources
■ Suitable for thermally demanding environments due to 175 °C rating
APPLICATIONs
■ 12 V, 24 V and 42 V loads
■ Automotive systems
■ General purpose power switching
■ Motors, lamps and solenoids