Description
N-channel enhancement mode field-effect power transistor available as a bare die using Philips General Purpose Automotive (GPA) TrenchMOS™ technology.

FEATUREs
■ 25 A testing of individual die
■ Life-tested to Q101 at 175 °C
■ Inductive energy testing of individual die
■ Automatic visual inspection.

APPLICATIONs
■ Automotive systems
■ 12 V and 24 V loads
■ Motors, lamps and solenoids
■ General purpose power switching.