BTD965N3-R-T1-G Datasheet - Cystech Electonics Corp.
MFG CO.
Cystech Electonics Corp.
Features
• Low VCE(sat), VCE(sat)=0.35 V (typical), at IC / IB = 3A / 0.1A
• Excellent DC current gain characteristics
• Complementary to BTB1386N3
Part Name
Description
View
MFG CO.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
Low Vcesat NPN Epitaxial Planar Transistor
Cystech Electonics Corp.
