BSS138P Datasheet - NXP Semiconductors.
MFG CO.

NXP Semiconductors.
General description
N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
FEATUREs and benefits
◾ Logic-level compatible
◾ Very fast switching
◾ Trench MOSFET technology
◾ AEC-Q101 qualified
APPLICATIONs
◾ Relay driver
◾ High-speed line driver
◾ Low-side loadswitch
◾ Switching circuits
Part Name
Description
View
MFG CO.
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 360 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 320 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 320 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 310 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 320 mA N-channel Trench MOSFET
Philips Electronics
60 V, 290 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 320 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 450 mA N-channel Trench MOSFET
NXP Semiconductors.
60 V, 350 mA N-channel Trench MOSFET
NXP Semiconductors.