BS616LV8023BC-10 Datasheet - Brilliance Semiconductor
Part Name
BS616LV8023BC-10
MFG CO.

Brilliance Semiconductor
DESCRIPTION
The BS616LV8023 is a high performance, very low power CMOS Static Random Access Memory organized as 524,288 words by 16 bits or 1,048,576 bytes by 8 bits selectable by CIO pin and operates from a wide range of 2.4V to 3.6V supply voltage.
FEATURES
• Very low operation voltage : 2.4 ~ 3.6V
• Very low power consumption :
Vcc = 3.0V C-grade: 20mA (Max.) operating current
I-grade : 25mA (Max.) operating current
0.5uA (Typ.) CMOS standby current
• High speed access time :
-70 70ns (Max.) at Vcc= 3.0V
-10 100ns (Max.) at Vcc= 3.0V
• Automatic power down when chip is deselected
• Three state outputs and TTL compatible
• Fully static operation
• Data retention supply voltage as low as 1.5V
• Easy expansion with CE1, CE2 and OE options
• I/O Configuration x8/x16 selectable by CIO, LB and UB pin
Page Link's:
1
2
3
4
5
6
7
8
9
10
More Pages
Part Name
Description
View
MFG CO.
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Brilliance Semiconductor
Ultra Low Power/Voltage CMOS SRAM 512K x 16 or 1M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Unspecified
Very Low Power/Voltage CMOS SRAM 1M x 16 or 2M x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor
Very Low Power/Voltage CMOS SRAM 256K x 16 or 512K x 8 bit switchable
Brilliance Semiconductor