DESCRIPTION
NPN silicon planar epitaxial transistor intended for common emitter class-AB operation. The transistor has internal input matching by means of MOS capacitors and is encapsulated in a 6-lead SOT273 flange envelope with a ceramic cap. All leads are isolated from the flange.

FEATURES
• Emitter ballasting resistors for an optimum temperature profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and easy design of wideband circuits.

APPLICATIONS
• Base stations in the 820 to 980 MHz range.