DESCRIPTION
NPN silicon planar power transistor in a 2-lead SOT468A flange package with ceramic cap. The emitter is connected to the flange.

FEATURES
• Emitter ballasting resistors for optimum temperature profile
• Gold metallization ensures excellent reliability
• Internal input and output matching for easy design of wideband circuits
• AlN substrate package for environmental safety.

APPLICATIONS
• Common emitter class-AB operation for PCN (Personal Communication Networks) and PCS (Personal Communication Services) base station applications in the 1800 to 2000 MHz frequency range.