DESCRIPTION
NPN silicon planar epitaxial power transistor in an 8-lead SOT409A SMD package with ceramic cap.
All leads are isolated from the mounting base.

FEATURES
• Emitter ballasting resistors for optimum temperature profile
• Gold metallization ensures excellent reliability
• Internal input matching to achieve high power gain and easy design of wideband circuits.

APPLICATIONS
• Common emitter class-AB operation in base stations in the 1800 to 1990 MHz frequency range.