DESCRIPTION
N-P-N silicon planar epitaxial transistor in SOT-119 envelope primarily intended for use in mobile radio transmitters in the 470 MHz communications band.
The transistor has a 6-lead flange envelope with a ceramic cap. All leads are isolated from the flange.

FEATURES
• multi-base structure and
   emitter-ballasting resistors for an
   optimum temperature profile.
• internal matching to achieve an
   optimum wideband capability and
   high power gain.
• gold metallization ensures
   excellent reliability.