DESCRIPTION
NPN silicon planar epitaxial transistor encapsulated in a 4-pin dual-emitter SOT103 plastic package.

FEATURES
• High power gain
• High efficiency
• Small size discrete power amplifier
• 1.9 GHz operating area
• Gold metallization ensures excellent reliability.

APPLICATIONS
• Common emitter class-AB opertion in hand-held radio equipment at 1.9 GHz.