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BLF8G24LS-100V Datasheet - NXP Semiconductors.

BLF8G24LS-100V image

Part Name
BLF8G24LS-100V

Other PDF
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page
17 Pages

File Size
250.1 kB

MFG CO.
NXP
NXP Semiconductors. 

General description
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.


FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth (90 MHz typical)
■ Designed for broadband operation (2300 MHz to 2400 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
   (RoHS)


APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the
   2300 MHz to 2400 MHz frequency range


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