
NXP Semiconductors.
General description
100 W LDMOS power transistor with improved video bandwidth for base station applications at frequencies from 2300 MHz to 2400 MHz.
FEATUREs and benefits
■ Excellent ruggedness
■ High efficiency
■ Low thermal resistance providing excellent thermal stability
■ Decoupling leads to enable improved video bandwidth (90 MHz typical)
■ Designed for broadband operation (2300 MHz to 2400 MHz)
■ Lower output capacitance for improved performance in Doherty applications
■ Designed for low memory effects providing excellent pre-distortability
■ Internally matched for ease of use
■ Integrated ESD protection
■ Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances
(RoHS)
APPLICATIONs
■ RF power amplifiers for base stations and multi carrier applications in the
2300 MHz to 2400 MHz frequency range